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Low-temperature bake (no interlayer mixing at bake temperatures below 140°C)
Easy resist removal
Enables finer patterning than single-layer lift-off resists
Low dispense volume — good coatability with excellent in-plane uniformity
Fewer defects (low solvent volatility suppresses particle generation during coating)
Easy undercut control
Good edge bead removal (EBR) performance
No interlayer mixing — compatible with most upper-layer resists

Up to 160°C, the amount of undercut can be controlled by adjusting the pre-bake temperature.

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The undercut amount can be controlled by adjusting the development time, up to approximately 70 seconds.

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Contact about [NAGASE's Lift-off Photoresist]